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  - 132 - mbrf1030ct thru mbrf10200ct isolation 10.0 am ps. schottky barrier rectifiers voltage range 30 to 200 volts current 10.0 amperes features  plastic material used carries underwriters laboratory classifications 94v-0  metal silicon junction, majority carrier conduction  low power loss, high efficiency  high current capab ility, low forward volt age drop  high surge capab ility  for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications  guardring for overvoltage protection  high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data  cases: ito-220ab molded plastic  terminals: leads solderable per mil-std-750, method 2026  polarity: as marked  mounting position: any  mounting torque: 5 in. - lbs. max  weight: 0.08 ounce, 2.24 grams ito-220ab dim ensions in inches and (m illim eters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbrf 1030 ct mbrf 1035 ct mbrf 1040 ct mbrf 1045 ct mbrf 1050 ct mbrf 1060 ct mbrf 10100 ct mbrf 10150 ct mbrf 10200 ct units maximum recurrent peak reverse voltage v rrm 30 35 40 45 50 60 100 150 200 v maximum rms voltage v rms 21 24 28 31 35 42 70 105 140 v maximum dc blocking voltage v dc 30 35 40 45 50 60 100 150 200 v maximum average forw ard rectified current at t c =133 o c i (av) 10 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=133 o c i frm 10.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 0.5 a maximum instantaneous forward voltage at (note 2) i f = 5a, tc=25 o c i f = 5a, tc=125 o c i f =10a, tc=25 o c i f =10a, tc=125 o c v f 0.70 0.57 0.80 0.65 0.85 0.75 0.95 0.85 0.88 0.78 0.99 0.87 v maximum instantaneous reverse current at rated dc blocking voltage @tc=25 @ tc=125 i r 0.1 15 0.15 150 ma ma voltage rate of change, (rated v r ) dv/dt 10,000 v/us rms isolation voltage (t=1.0 second, r.h. Q 30%, ta=25 ) (note 4) (note 5) (note 6) v iso 4500 3500 1500 v typical thermal resistance per leg (note3) r jc 3.5 /w operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +150 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. thermal resistance from junction to case per leg. 4. clip mounting (on case), where lead does not overlap heatsink with 0.110? offset. 5. clip mounting (on case), where leads do overlap heatsink. 6. screw mounting with 4-40 screw, where washer diameter is ? 4.9 mm (0.19?)   
 

 
        
      



 pin 1 pin 3 pin 2
- 133 - fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 0.1 10 100 180 150 120 90 60 30 0 number of cycles at 60hz fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) fig.4- typical reverse characteristics instantaneous reverse current .(ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 fig.6- typical transient thermal characteristics per leg transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1 10 100 100 1,000 5,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 fig.1- forward current derating curve average for ward current . (a) 0 50 100 150 6 5 4 3 2 1 0 case temperature. ( c) o resistive or inductive load ratings and characteristic curves (mbrf1030ct thru mbrf10200ct) pulse width=300 s 1% duty cycle 500 tj=tj max. 8.3ms single half sine-wave jedec method mbrf10200ct mbrf10150ct mbrf10100ct mbrf1050ct-mbrf1060ct mbrf1030ct-MBRF1045CT tj=25 c 0 tj=75 c 0 tj=125 c 0 tj=25 c 0


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